PAM XIAMEN offers Glass Substrates(ITO Coated Glass / Plastic Substrates and ITO/ZnO coated Sodalime Glass).
ITO Coated Glass / Plastic Substrates
ITO coated(sodalime) glass has highly electrical conductivity yet with excellent transparence. It has been widely used in flat panel display and solar cells.
[...]
2019-04-18meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
600 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
340 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
>200
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
50
n- Si:P
36±4
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
5.4±0.7
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
66 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
78
n- Si:P
25 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/EOx
78
n- Si:P
20 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
17.5 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
60±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
70±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
22.5
p- Si:B
15±10%
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
6±0.9
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
38
p- [...]
2019-03-08meta-author
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]
Highlights
•The thickness of graphene grown on SiC was determined by AES depth profiling.
•The AES depth profiling verified the presence of buffer layer on SiC.
•The presence of unsaturated Si bonds in the buffer layer has been shown.
•Using multipoint analysis thickness distribution of the graphene on [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
5000
P/E
3.4-3.7
SEMI Prime, Individual cst
n-type Si:P
[100]
2″
40 ±10
P/P
1-3
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers
n-type Si:P
[100]
2″
1000
P/P
1-10
SEMI Prime
n-type Si:Sb
[100]
2″
280
P/E
0.01-0.02
SEMI Prime
n-type Si:Sb
[100]
2″
1000
P/E
0.005-0.020
SEMI Prime
n-type Si:As
[100]
2″
300
P/P
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
500
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
7000
P/E
0.001-0.005
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual [...]
2019-03-07meta-author