The single crystal germanium is n type at room temperature, and the resistivity shows non-single dependence on temperature. When conduction type transits from n type to p type, the bulk germanium resistivity is in maximum, and the carrier mobility is declining. With the increasing [...]
2021-11-10meta-author
PAM XIAMEN offers BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES.
Physical Parameters
Crystal structure
Tetragonal, tP5, P4mm, No. 99
Growth method
Top seeded solution method
Unit cell constant
a=3.995 Å
Melt point (℃)
1,625 °C (2,957 °F; 1,898 K)
Density (g/cm3)
6.02
Hardness (mohs)
6-6.5
Thermal expansion(/℃)
9.4×10-6
Dielectric constants
ea = 3700, ec = 135 (unclamped)
ea = 2400, e c = 60 (clamped)
Chemical stability
Insoluble in water
Transmission wavelength
0.45 ~ 6.30 mm
Size
10×3m, 10×5m, 10×10mm, 15×15mm, [...]
2019-03-11meta-author
PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author
For single photon detection technology, in addition to the traditional InP/InGaAs SPAD, new material systems such as low noise material systems constructed from Sb based digital alloys, multi multiplication InP/InGaAs SPAD using ionization engineering, and InAlAs/InGaAs SPAD have also been developed. PAM-XIAMEN can provide InP [...]
2023-07-12meta-author
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and [...]