Deep level defects in p-type GaAs1−x Bi x (x < 1%) and GaAs grown by molecular beam epitaxy at substrate temperatures of 330 °C and 370 °C have been characterized by deep level transient spectroscopy. We find that incorporating Bi into GaAs at 330 [...]
2019-11-25meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[5,5,12] ±0.5°
3″
380
P/E
1-10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/P
>10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/E
>10
SEMI Prime
p-type Si:B
[111-28° towards[001]] ±0.5°
3″
400
P/E
>20
SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111] ±0.5°
3″
508
E/E
0.792-1.008
SEMI TES, TTV<2μm, Epak cst
p-type Si:B
[111-4°] [...]
2019-03-06meta-author
Transmitance-GaN material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers Large Size Photomask.
Chromium plate accuracy (Standard Size:430mmx430mm)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
5μm/5μm
10μm/10μm
20μm/20μm
CD Control
±0.15μm(QZ)
±0.5μm
±1.0μm
±2.0μm
Total Pitch Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±2.0μm
Registration Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Overlay Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Orthogonality
±0.75μrad
±2.0μrad
±3.0μrad
±4.0μrad
Chrome plate material (Photomask blank plate)
Material
SodaLimeGlass、Quartz
Max. Size
850mm*1400mm
Normal Size
420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm,
800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm
Thickness
2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm,
5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ)
Film Type
LowReflectanceChrome
Optical Density
(λ=450nm)
BetweenPlates3.0±0.3InPlate±0.3
Reflectivity
(λ=436nm)
BetweenPlates10±5%InPlate±2%
Main application areas:
1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries
2、HDI, [...]
2019-07-04meta-author
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers.
1. Specification of 440-460nm Blue GaN LD wafer
(PAM-190909-GAN-LD)
Item
Descriptions
Materials
Substrate
blue laser
440-460nm
InGaN
2 inch Sapphire substrate***
GaN Blue LD EPI Wafer Spec
Spec
LD Epitaxial Wafer Size
Growth
MOCVD
Diameter
50.8 ± 0.2 [...]
2018-08-22meta-author