AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs
AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched on GaAs substrates. We observe [...]