Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A:Sorry, we can not offer fabrication of p and n metal contacts, also we can [...]
Q: What wafer size do you provide with flat sapphire substrate? A:Currently we still can offer 2″ wafer on flat sapphire substrate.
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
Q:For pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flipchip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. A:LED light is sourcing from mqw light, emitting in all directions, p-GaN is positive(front side), it will naturally [...]
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or [...]
Q:What atomic ratio for Si/C in SiC ? A:Atomic ratio for Si/C in SiC is 1:1
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare the two directly? A: Sure.
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