News

PAM-XIAMEN Offers AlGaN–GaN HEMTs Grown on Sapphire Substrates

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production in 2012.  And now PAM-XIAMEN [...]

2014-08-15 , , Read more...

Hybrid Chips of Gallium Nitride and Silicon

Hybrid Chips of Gallium Nitride and Silicon Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron Device Letters, they report having [...]

2014-08-11 , , , Read more...

Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers

Computer modeling of surface interactions and contamin Highlights • Dynamics of contaminant removal from the surface of micro/nanotrench is simulated. • The trench is rectangular and made of one or two different materials. • Various diffusivities and surface characteristics are considered in the model. • In multimaterial trench, cleaning dynamics strongly depends on stacking order. • Dynamics has two regimes [...]

2014-08-10 , , Read more...

enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had a 1-mm-thick LT GaAs layer [...]

2014-07-13 , , Read more...

Si-doped GaN Epitaxial template on sapphire

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire: GaN Template2″ Specification Purity Si-doped GaN Epitaxial template on sapphire Orientation -1 Film thickness >5.0µm ± 0.25µm Diameter 50.8 ± 0.1mm Edge exclusion <1mm Useable surface area > 90% Conduction Type N-Type Resisitivity 0.001 – 0.01 Ohm-cm Carrier Concentration 1E19 /cc Macro [...]

2014-06-19 Read more...

Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches

Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less than 1 nm rms roughness [...]

2014-04-28 Read more...

Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application

Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application The recent development of CdZnTe detectors has made it possible to produce CdZnTe based clinical radionuclide imagers. We therefore investigate the pixellation geometry ideal for this application using numerical simulation. These studies indicate that, for a fixed pixel pitch, configuring the detector with [...]

2014-04-25 Read more...

GaN Wafer

GaN Wafer Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie: GaN substrate wafer GaN on sapphire GaN on silicon HEMT wafer AlN/GaN on sapphire AlGaN/GaN on sapphire Here is relative information of GaN wafer: GaN wafer price/GaN wafer cost: But while LED and power electronics [...]

2014-04-22 Read more...

Effects of sample processing on the performance of CdZnTe crystals

Effects of sample processing on the performance of CdZnTe crystals Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal temperature tolerance during the detector [...]

2014-04-21 Read more...