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GaN Epitaxial Technology

GaN Epitaxial Technology GaN technology today is important technology player- Gallium Nitride on Silicon Carbide (GaN on SiC), Gallium Nitride on Silicon (GaN on Si) and Gallium Nitride on Sapphire (GaN on Sapphire). They are used in LED, RF and microwave devices. We can see a dilemma in the GaN [...]

2015-01-06 , , Read more...

The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks

The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks This paper studies the effect of anisotropy on the response of an R  -plane sapphire wafer to a rapid thermal loading. The finite element method was used to analyse the temperature and stress distribution in [...]

2014-12-31 , , Read more...

1 – Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology

1 – Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology This chapter reviews various processes for manufacturing SOI wafers. There is a specific focus on Separation by IMplantation of OXygen (SIMOX) and on technologies based on direct bonding (bonded silicon-on-insulator (BSOI), epitaxial layer transfer process (Eltran®), Smart Cut™). For the latter, [...]

2014-12-25 , , , Read more...

Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate Highlights • The growth of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate. • The investigation of the effect of HT-AlN thickness on crystalline quality and stress of GaN on SiC. • The semi-insulating characteristic of GaN layer analyzed by PL measurement. • The introduction of modulation-doped AlGaN [...]

2014-12-16 , , Read more...

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation   Si and Ge hemispherical concave wafers can be prepared by plastic deformation using Si and Ge single- and polycrystal wafers. Deformation regions in which such Si and Ge hemispherical wafers can be obtained by high-temperature plastic deformation [...]

2014-12-02 , , Read more...

GaAs/AlAs Wafer

From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. For GaAs / AlAs short-period [...]

2014-11-21 Read more...

InGaAsP/InGaAs on InP substrates

PAM-XIAMEN, an epitaxy manufactory, provide InGaAsP/InGaAs epi on InP substrate and custom InP thin films on InP wafers for academic research in III-V photonics. The epitaxial wafer (Photodiode) consist of different InGaAs, InP and InGaAsP layers on top of a semi-insulated InP substrate as follows: 1. Structures of InP Epitaxy [...]

2014-11-21 Read more...

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy   GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed by a variety of characterization [...]

2014-11-18 Read more...