News

Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics

Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics   The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing the cumulative energy demand (CED) [...]

2013-10-15 , , Read more...

InGaAs/InP epi wafer for PIN

PAM-XIAMEN can offer 2” InGaAs/InP epi wafer for PIN as follows. InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs are between the properties of [...]

2013-10-15 Read more...

Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and reflectivity experiments, both at 4.5 K [...]

2013-10-14 , , , Read more...

GaAs Schottky Diode Epitaxial Wafers

We offer GaAs Epitaxial Wafers for Schottky Diode as follows: 1. GaAs Schottky Diode Epi Structures No.1 GaAs Schottky Diode Epiwafer Epitaxial Structure PAM210319 No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C     Tol. Dopant Carrrier Type 4 GaAs   1.00 ±10% ＞5.0E18 N/A Si N++ 3 GaAs   0.28 ±10% 2.0E17 ±10% Si N 2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — — 1 GaAs   0.05 ±10% — N/A — — Substrate: 2”,3”,4″   No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode PAM210326 -SDE No. Material Thickness Doping Doping Concentration 3 GaAs schottky contact layer – n – 2 GaAs ohmic contact layer – – 5×10^18 cm-3 1 Low temperature GaAs 2um – – 0 Semi-insulating GaAs (100) substrate –     2. About GaAs Schottky Diode [...]

2013-10-14 Read more...

Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers

mproved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers Improved process control, lowered costs and reduced risks can be realized through the use of non-destructive mobility and sheet charge density measurements during the fabrication of [...]

2013-10-12 , , Read more...

LT-GaAs

We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications. 1. 2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜1ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate   Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. LT-GaAs Introduction: Low-temperature grown GaAs is [...]

2013-10-11 Read more...

Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining

Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining   This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut using 75 and 100 μm molybdenum [...]

2013-10-11 , , Read more...