Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. With increasing αf, the reflectance of [...]
Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted light was focused onto an [...]
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity [...]
X-ray diffraction analysis of LT-GaAs multilayer structures Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity of a satellite reflection of [...]
Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4″ bulk GaN price gets below the breakeven price. In either [...]
Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission [...]
InGaAs/InAlAs heterostructure is realized on GaAs substrate. This GaAs-based metamorphic high electron mobility transistor (mHEMT) heterostructure can reduce the stress at the interface between heterostructure and GaAs through the gradual change of In composition. Such a mHEMT structure can provide device performance that is superior to GaAs-based pHEMT and [...]
GaAs / AlGaAs / GaAs epi wafer in the diameter of 2” or 4” is available. This GaAs epitaxial wafer is applicable for semiconductor microwave devices and microwave monolithic integrated circuits. Here comes the typical structure of gallium arsenide epi wafer, please see below: 1. GaAs Wafer Epitaxial Structures Structure 1: 2”GaAs/AlGaAs/GaAs epi wafer S.No Parameters Specifications 1 GaAs substrate layer thickness 500μm 2 layer thickness 2μm 3 GaAs top layer thickness 220 [...]
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT): HEMT structure Thickness GaAs cap layer 100A AlGaAs, x=0.28,barrier layer, [...]
We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest [...]
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