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Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation   Si and Ge hemispherical concave wafers can be prepared by plastic deformation using Si and Ge single- and polycrystal wafers. Deformation regions in which such Si and Ge hemispherical wafers can be obtained by high-temperature plastic deformation [...]

2014-12-02 , , Read more...

GaAs/AlAs Wafer

From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. For GaAs / AlAs short-period [...]

2014-11-21 Read more...

InGaAsP/InGaAs on InP substrates

PAM-XIAMEN, an epitaxy manufactory, provide InGaAsP/InGaAs epi on InP substrate and custom InP thin films on InP wafers for academic research in III-V photonics. The epitaxial wafer (Photodiode) consist of different InGaAs, InP and InGaAsP layers on top of a semi-insulated InP substrate as follows: 1. Structures of InP Epitaxy [...]

2014-11-21 Read more...

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy   GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed by a variety of characterization [...]

2014-11-18 Read more...

AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification                                                                   · Orange LED Wafer Substrate: 　 　                 P+GaAs p-GaP p-AlGaInP MQW n-AlGaInP DBR n-ALGaAs/AlAs Buffer GaAs substrate ·Chip Sepcification (Base on 7mil*7mil chips) 　 　 　 　 Parameter Chip Size 7mil(±1mil)*7mil(±1mil) Thickness 7mil(±1mil) P Electrode U/L N Electrode AU Structure Such as right-shown ·Optical-elctric characters 　 　 　 　 　 　 Parameter Condition Min. Typ Max. Unit Forward voltage If=10μA 1.35 ┄ ┄ V Reverse voltage If=20mA ┄ ┄ 2.2 V Reverse current V=10V ┄ ┄ 2 μm Wavelength If=20mA 565 ┄ 575 nm Half wave width If=20mA ┄ 10 ┄ nm ·Light intensity characters 　 　 　 　 　 　 Brightness code LA LB LC LD LE LF LG LH IV(mcd) 10-15 15-20 20-25 25-30 30-35 35-40 40-50 50-60   Source:PAM-XIAMEN   If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com orpowerwaymaterial@gmail.com.

2014-11-04 , , Read more...

Measurement of thickness profile and refractive index variation of a silicon wafer using the optical comb of a femtosecond pulse laser

Measurement of thickness profile and refractive index variation of a silicon wafer using the optical comb of a femtosecond pulse laser We developed a method to measure the thickness profile and refractive index variation for silicon wafers based on a spectral-domain interferometry. Through a spectral domain analysis of multiple interferograms [...]

2014-10-27 , , Read more...

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO2 SOI, or replacing it with another material, will be a way [...]

2014-10-13 , , Read more...

Determining the optimal probing lot size for the wafer probe operation in semiconductor manufacturing

In this study, we reformulated the problem of wafer probe operation in semiconductor manufacturing to consider a probe machine (PM) which has a discrete Weibull shift distribution with a nondecreasing failure rate. To maintain the imperfect PM during the probing of a lot of wafers, a minimal repair policy [...]

2014-09-30 , , Read more...