Distribution of defects and impurities in gallium arsenide wafers after surface gettering Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows high-resistivity material to be obtained [...]
A fracture criterion for gallium arsenide wafers The fracture of single crystal gallium arsenide (GaAs) semi-conducting wafers was studied. Prismatic beam specimens, cut at different crystallographic orientations from thin wafers, were loaded to failure in four-point bending. Fracture in these crystals occurred predominantly on the {110} family of crystallographic planes. [...]
Thanks to GaAs tunnel junction technology, we offer epi wafers of single-junction and dual-junction InGaP / GaAs solar cells, with different structures of epitaxial layers (AlGaAs, InGaP) grown on GaAs for solar cell application. And now we offer GaAs epi wafer with InGaP tunnel junction as follows: 1. InGaP / GaAs Solar [...]
A process model of wafer thinning by diamond grinding This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding process model (WGPM) developed previously. [...]
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point method is an effective tool [...]
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused by charged water drops and [...]
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is the coupling of diffusion, chemical [...]
Study of Highly Pixelated CdZnTe Detector for PET Applications We are investigating the feasibility of a high-resolution PET insert device based on a Cadmium Zinc Telluride (CdZnTe) detector with 350 μm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution to sub-500 micrometer [...]
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of HF and HCl are employed [...]
Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection [...]
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