Float-Zone Mono-Crystalline Silicon

Float-Zone Mono-Crystalline Silicon

FZ-Silicon

The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

  • Description

Product Description

Float-zone mono-crystalline silicon

 

FZ-Silicon

The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

NTDFZ-Silicon

The mono-crystalline silicon with high-resistivity and uniformity can be achieved by neutron irradiation of FZ-silicon, to ensure the yield and uniformity of produced elements, and is mainly used to produce the silicon rectifier (SR), silicon control (SCR), giant transistor (GTR), gate-turn-off thyristor (GTO), static induction thyristor (SITH), insulate-gate bipolar transistor (IGBT), extra HV diode (PIN), smart power and power IC, etc; it is the main functional material for various frequency converters, rectifiers, large-power control elements, new power electronic devices, detectors, sensors, photoelectronic devices and special power devices..

GDFZ-Silicon

Utilizing the foreign-material diffusion mechanism, add the gas-phase foreign-material during the float-zone process of monocrystalline silicon, to solve the doping problem of float-zone process from the root, and to get the GDFZ-silicon which is N-type or P-type, has the resistivity 0.001-300 Ω.cm, relative good resistivity uniformity and neutron irradiation. It is applicable for producing various semi-conductor power elements, insulate-gate bipolar transistor (IGBT) and high-efficiency solar cell, etc.

CFZ-Silicon

The monocrystalline-silicon is produced with the combination of Czochralski and float-zone processes, and has the quality between the CZ monocrystalline silicon and FZ monocrystalline silicon; the special elements can be doped, such as the Ga, Ge and others. The new-generation CFZ silicon solar wafers are better than various silicon wafers in global PV industry on each performance index; the conversion efficiency of solar panel is up to 24-26%. The products are mainly applied in the high-efficiency solar batteries with the special structure, back-contact, HIT and other special processes, and more widely used in the LED, power elements, automobile, satellite and other various products and fields.

Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers

FZ monocrystalline silicon specification 

Type Conduction Type Orientation Diameter(mm) Conductivity(Ω•cm)
High resistance N&P <100>&<111> 76.2-200 >1000
NTD N <100>&<111> 76.2-200 30-800
CFZ N&P <100>&<111> 76.2-200 1-50
GD N&P <100>&<111> 76.2-200        0.001-300

Wafer specification

Ingot Parameter   Item Description
Growing method FZ
Orientation <111>
Off-orientation 4±0.5 degree to the nearest <110>
Type/Dopant P/Boron
Resistivity 10-20 W.cm
RRV ≤15% (Max edge-Cen)/Cen

 

Wafer Parameter  Item  Description
Diameter 150±0.5 mm
Thickness 675±15 um
Primary Flat Length 57.5±2.5 mm
Primary Flat Orientation <011>±1 degree
Secondary Flat Length None
Secondary Flat Orientation None
TTV ≤5 um
Bow ≤40 um
Warp ≤40 um
Edge Profile SEMI Standard
Front Surface Chemical-Mechenical Polishing
LPD ≥0.3 um@≤15 pcs
Back Surface Acid Etched
Edge Chips None
Package Vacuum Packing; Inner Plastic, Outer Aluminum

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